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Gigabit Ethernet Applications

1 2 3

2-3 Optical receiver unit
The optical receiver unit consists of a receiver optical subassembly (ROSA) and a limiting amplifier. Photo 3 shows a photograph of the newly developed ROSA.

A high-speed PIN photodiode and a low noise transimpedance amplifier (TIA) are integrated on a TOHeader and in a coaxial package, forming a module called TO-stem. Not only is this coaxial module small in size and low in cost, but it also has high sensitivity and wide bandwidth due to its optimized design.

In order to obtain wide frequency bandwidth under low bias condition, the authors adopted a mesa structure PIN photodiode that has a light receiving area of 30 um in diameter. Typical frequency response of this PIN photodiode is reported in Fig. 6, showing a bandwidth of more than 10 GHz at 1 V bias voltage. The plots in the figure also show that the bandwidth of the ROSA is pretty stable at bias voltages higher than 1 V.

The TO-header of the ROSA is made from an law cost iron based material that has acceptable thermal conductivity. The structure of the TO-header is optimized to obtain stable frequency response by minimizing parasitic inductance caused by the bonding wires around the TIA.

Figure 7 shows small signal frequency response of the ROSA. Flat frequency response and wide bandwidth are obtained for both transimpedance and group delay. Figure 8 shows receiver sensitivity of the ROSA.


Using a PRBS 231-1 pattern signal, receiver sensitivity of - 20 dBm was achieved at room temperature at BER = 10-12 and bit rate = 10.7 Gb/s. The plots in the figure also exhibit a small temperature dependency, showing temperature deviation of less than 1 dB in a wide temperature range from -20 to 120 deg. C.

2-4 Mechanical configuration
Figure 9 shows one example of host board using the X2 transceiver. Usually mechanical design of pluggable transceivers needs to satisfy contradictory parameters such as compact size and good heat radiation, and pluggable structure and electro magnetic interference (EMI) suppression. The above requirements are more critical to the mechanical design of 10Gbps transceivers than that of lower bit rate transceivers. This section describes suppression of EMI radiation from the X2 transceiver.

High frequency noise generated by the transceiver circuit, TOSA and ROSA is radiated to outside through a tiny gap in the housing of the X2 transceiver. In order to prevent the pluggable structure of the transceiver from providing a path for noise to radiate out, latches
and springs comprising a lock release structure must be placed away from electrical circuit. An EMI gasket is placed between the front panel of the host board and the face plate of the X2 transceiver so that good electrical contact is provided. In order to achieve good EMI
shield at frequency range up to 40 GHz, this gasket was carefully chosen by its material properties, such as elasticity and conductivity, and size. Actual EMI measurements as well as comparison of EMI shield characteristics of several candidates were done so as to determine suitable gasket design.

High frequency radiation noise coming out of SC receptacle is difficult to deal with when noise frequency is over 10 GHz. Because the noise is coupled with metal parts of SC connector, such as spring, it is easily radiated to outside at high level. As a solution for obtaining both good high-frequency performance of optical subassembly (OSA) and good EMI performance, the authors introduced a new structure to the OSA between the TOheader portion and the SC sleeve portion, which electrically isolates the two portions from each other. The SC sleeve portion is connected rigidly to the X2 housing to have frame ground potential. Figure 10 shows the struc-ture described above. As a result of introducing this structure, electrical circuit is completely shielded by the housing and good EMI performance is achieved. Electric field intensity distributions of the SC receptacle area measuned by using near magnetic field observation probe are reported in Fig. 11. It shows the high intensity area does not extend to the SC receptacle section when new structure is introduced.

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